B-NGO is a PRIN 2022 project funded by MUR.

The advent of two-dimensional (2D) materials redefined the material science of the last decade.  Among the new discovered layered systems,  Hexagonal boron nitride (h-BN) is increasingly considered thanks to its extraordinary physical properties. Given its in-plane hexagonal structure, h-BN represents also an appealing solution as functional interlayer for the epitaxy of nitrides.  Superconducting nitrides are with no doubt possible candidates for the implementation of superconducting circuits for quantum computing. Hence, investing a great effort in material synthesis and device fabrication is strategic to enhance the performance of superconducting circuits, circumventing the present limitations due to losses incurred within the materials used.  Identifying dielectric materials, superconducting films and fabrication techniques that minimize losses is critical in establishing scalable architectures for superconducting quantum computing.
“B-NGO” aims at demonstrating a novel integration scheme for advanced and layered nitrides on Si by molecular beam epitaxy (MBE), based on the use of epitaxial h-BN as insulating vdW template. 

Participants: University of Milano-Bicocca (Stefano Cecchi, PI), INFN Milano-Bicocca (Elena Ferri, local project leader)